The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Mar. 01, 2017
Applicant:

Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;

Inventor:

Takeshi Koyama, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01);
Abstract

Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodesvia a buried oxide film, and an SOI layer of single crystal silicon is formed between a photodiode and an adjacent photodiode via the buried oxide film for shielding unnecessary light.


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