Manufacture method of oxide semiconductor tft substrate and structure thereof

Abstract

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The method continuously forms the gate isolation layer (), the oxide semiconductor layer (') and the etching stopper layer (′), and implements pattern process to the oxide semiconductor layer (′) and the etching stopper layer (′) with one halftone mask or a slit diffraction mask to first form an island shaped oxide semiconductor layer () and an island shaped etching stopper layer () which are stacked up, and then to form blind holes () respectively at two sides of the island shaped oxide semiconductor layer () and the island shaped etching stopper layer (); and a depth of the blind hole () is larger than a thickness of the island shaped etching stopper layer (), and smaller than a thickness sum of the island shaped etching stopper layer () and the island shaped oxide semiconductor layer () and the contact area of the source/the drain of the TFT with the oxide semiconductor layer () is enlarged to reduce the contact resistance and raise the on state current of the TFT.