The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Mar. 13, 2017
Byoungkeun Son, Hwaseong-si, KR;
Yoocheol Shin, Hwaseong-si, KR;
Changhyun Lee, Suwon-si, KR;
Hyunjung Kim, Suwon-si, KR;
Chung-il Hyun, Hwaseong-si, KR;
Byoungkeun Son, Hwaseong-si, KR;
Yoocheol Shin, Hwaseong-si, KR;
Changhyun Lee, Suwon-si, KR;
Hyunjung Kim, Suwon-si, KR;
Chung-Il Hyun, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.