The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
May. 25, 2015
Mediatek Inc., Hsin-Chu, TW;
Chang-Tzu Wang, Yangmei, TW;
Bo-Shih Huang, Hsinchu, TW;
MEDIATEK INC., Hsin-Chu, TW;
Abstract
The invention provides a semiconductor device. The semiconductor device includes a fin field effect transistor (finFET) array including finFET units. Each of the finFET units includes a substrate having a fin along a first direction. A first metal strip pattern and a second metal strip pattern are formed on the fin, extending along a second direction that is different from the first direction. The first and second metal strip patterns are conformally formed on opposite sidewalls and a top surface of the fin, respectively. A first contact and a second contact are formed on the fin. The first and second metal strip patterns are disposed between the first and second contacts. A first dummy contact is formed on the fin, sandwiched between the first and second metal strip patterns.