The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Apr. 26, 2017
Applicant:

Stmicroelectronics SA, Montrouge, FR;

Inventors:

Philippe Galy, Le Touvet, FR;

Sotirios Athanasiou, Grenoble, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 27/0629 (2013.01); H01L 27/1203 (2013.01); H01L 29/456 (2013.01);
Abstract

An ESD protection device includes a MOS transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a well region electrically coupled by a resistive-capacitive circuit configured to control turn on of the MOS transistor in response to an ESD event. The resistive-capacitive circuit has a common part with at least one of the source, gate or drain regions of the MOS transistor and includes a capacitive element and a resistive element. A first electrode of the capacitive element is formed by the resistive element and a second electrode of the capacitive element is formed by at least a portion of a semiconductor film within which the source/drain region is formed.


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