The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Jun. 14, 2017
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 29/205 (2006.01); H01L 29/06 (2006.01); G01B 11/30 (2006.01); G01B 11/02 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01B 11/02 (2013.01); G01B 11/303 (2013.01); H01L 21/0254 (2013.01); H01L 29/0692 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
In an embodiment, a semiconductor structure includes a support substrate comprising a surface adapted to support epitaxial growth of a Group III nitride, one or more epitaxial Group III nitride layers arranged on the surface and supporting a plurality of transistor devices assembled upon the support substrate, and a test structure formed in a Group III nitride layer. The test structure includes a plurality of trenches configured to provide an optical diffraction grating when illuminated by UV light. The trenches have a parameter corresponding to a parameter of a feature of the transistor devices.