The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 01, 2016
Nissin Electric Co., Ltd., Kyoto, JP;
Eiji Takahashi, Kyoto, JP;
NISSIN ELECTRIC CO., LTD., Kyoto, JP;
Abstract
Provided is a film forming method to minimize decreases in the electrical resistance of an oxide semiconductor film even when a fluorinated silicon nitride film is formed directly on the oxide semiconductor film. The film forming method includes: a surface treatment process in which a substance including an oxide semiconductor film on a substrate is prepared, plasma is generated using a mixed gas of oxygen and hydrogen which contains hydrogen at a rate of 8% or less (not including 0), and plasma is used to treat surface of oxide semiconductor film; a film formation process in which a fluorinated silicon nitride film (a SiN:F film) is subsequently forming on oxide semiconductor film by a plasma CVD method in which plasma is generated using a raw material gas containing silicon tetrafluoride gas and nitrogen gas; and an annealing process in which substrate and film thereon are subsequently heated.