The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Apr. 26, 2016
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventors:
Jae Hee Sim, Icheon-si, KR;
Min Seok Son, Icheon-si, KR;
Keun Kyu Kong, Icheon-si, KR;
Jeong Hoon An, Icheon-si, KR;
Assignee:
SK hynix Inc, Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/3085 (2013.01); H01L 21/324 (2013.01); H01L 29/0657 (2013.01);
Abstract
A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.