The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Feb. 21, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xintuo Dai, Clifton Park, NY (US);

Jiong Li, Rexford, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/283 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/30604 (2013.01);
Abstract

Methods for forming a gate structure of a circuit structure are provide. The methods for forming the gate structure may include: forming a first gate pattern in a gate mask layer, the forming including a first etching of rounded corner portions of the first gate pattern; forming a second gate pattern in the gate mask layer, the second gate pattern at least partially overlapping the first gate pattern, the forming including a second etching of rounded corner portions of the second gate pattern; and, etching the gate mask layer using the first gate pattern and second gate pattern to form the gate structure.


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