The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Nov. 23, 2015
SK Hynix Inc., Gyeonggi-do, KR;
Tae Kyung Kim, Chungcheongbuk-do, KR;
Jung Myoung Shim, Gyeonggi-do, KR;
Myung Kyu Ahn, Gyeonggi-do, KR;
Sung Soon Kim, Seoul, KR;
Woo Duck Jung, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The method of manufacturing a semiconductor memory device, includes forming a tunnel insulation layer and a floating gate on a semiconductor substrate of an active region, forming a trench in the semiconductor substrate of an isolation region, forming, in the trench, a sacrificial layer having an upper surface positioned higher than a surface of the semiconductor substrate, forming a capping layer over the sacrificial layer, and forming an air gap by removing the sacrificial layer without removing the capping layer.