The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
May. 21, 2012
Hiroshi Nakashima, Fukuoka, JP;
Haigui Yang, Chang chun, CN;
Hitoshi Sumida, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, Fukuoka-shi, JP;
Abstract
A method of manufacturing a semiconductor device according to the invention includes the step Sof cleaning the silicon carbide substratesurface, the step Sof bringing a material gas into a plasma and irradiating the atoms contained in the material gas to silicon carbide substratefor growing silicon nitride filmon silicon carbide substrate, the step Sof depositing silicon oxide filmon silicon nitride filmby the ECR plasma CVD method, and the step Sof annealing silicon carbide substrateincluding silicon nitride filmand silicon oxide filmformed thereon in a nitrogen atmosphere. By the method of manufacturing a semiconductor device according to the invention, a semiconductor device that exhibits excellent interface properties including an interface state density and a flat band voltage is obtained.