The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Sep. 20, 2017
Sfi Electronics Technology Inc., Taoyuan, TW;
Ching-Hohn Lien, Taoyuan, TW;
Jie-An Zhu, Shanghai, CN;
Zhi-Xian Xu, Taoyuan, TW;
Ting-Yi Fang, Taoyuan, TW;
Hong-Zong Xu, Taoyuan, TW;
SFI ELECTRONICS TECHNOLOGY INC., Taoyuan County, TW;
Abstract
A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).