The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Dec. 22, 2016
Sandisk Technologies Llc, Plano, TX (US);
Ariel Navon, Revava, IL;
Tz-Yi Liu, Palo Alto, CA (US);
Eran Sharon, Rishon Lezion, IL;
Alexander Bazarsky, Holon, IL;
Judah Hahn, Ofra, IL;
Alon Eyal, Zichron Yaacov, IL;
Omer Fainzilber, Even Yehuda, IL;
SanDisk Technologies LLC, Plano, TX (US);
Abstract
Technology is described for keeping current (e.g., peak power supply current or ICC) in a non-volatile memory system within a target while maintaining high throughput. Programming conditions are adaptively changed at the sub-codeword level in order to keep power supply current of the memory system within a target. In one embodiment, a chunk of data that corresponds to a sub-codeword is written while consuming lower than normal programming current in order to keep power supply current within a target. The relatively low programming current may increase the expected raw BER. However, other portions of the codeword can be written with a higher than normal programming current, which results in a lower expected bit raw error rate for the memory cells that store that portion.