The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Jul. 05, 2013
Applicants:

California Institute of Technology, Pasadena, CA (US);

Texas A&m University System, College Station, TX (US);

Inventors:

Anxiao Jiang, College Station, TX (US);

Yue Li, College Station, TX (US);

Eyal En Gad, Pasadena, CA (US);

Michael Langberg, Buffalo, NY (US);

Jehoshua Bruck, Pasadena, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 13/00 (2006.01); G06F 13/28 (2006.01); G06F 3/06 (2006.01); H03M 13/13 (2006.01); G11C 11/56 (2006.01); G06F 11/10 (2006.01); G06F 12/02 (2006.01); G11C 17/14 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01); G06F 11/1012 (2013.01); H03M 13/13 (2013.01); G06F 11/1068 (2013.01); G06F 12/0246 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 17/146 (2013.01); G11C 2029/0411 (2013.01);
Abstract

Both rewriting and error correction are technologies usable for non-volatile memories, such as flash memories. A coding scheme is disclosed herein that combines rewriting and error correction for the write-once memory model. In some embodiments, code construction is based on polar codes, and supports any number of rewrites and corrects a substantial number of errors. The code may be analyzed for a binary symmetric channel. The results can be extended to multi-level cells and more general noise models.


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