The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 17, 2016
Faraday Technology Corp., Hsin-Chu, TW;
Chih-Hung Wu, Hsin-Chu, TW;
Faraday Technology Corp., Hsin-Chu, TW;
Abstract
A Double Data Rate (DDR) gating method is applied to a memory controller of an associated DDR gating apparatus. The DDR gating method includes: outputting from the memory controller an outward clock signal to a memory, and receiving from the memory a backward clock signal corresponding to the outward clock signal, wherein the backward clock signal is utilized as reference for a data read operation of the memory controller with respect to the memory; and providing an input stage of the memory controller with a reference signal to generate, through single ended receiving of the input stage, gating-related information for performing gating when sampling the backward clock signal, and lengthening time of a preamble of the backward clock signal with aid of the single ended receiving of the input stage, for increasing a detection margin of the preamble.