The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Jul. 06, 2017
National Sun Yat-sen University, Kaohsiung, TW;
Yi-Jen Chiu, Kaohsiung, TW;
Po-Yun Wang, Kaohsiung, TW;
Wei Lin, Tainan, TW;
Yang-Jeng Chen, Kaohsiung, TW;
NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung, TW;
Abstract
A method for fabricating a waveguide construction is described and has steps of: providing a layered structure by: forming a first-type InGaAsP layer on a substrate, forming a first-type InP layer on the first-type InGaAsP layer, forming an active layer containing gallium on the first-type InP layer, forming a second-type InP layer on the active layer, and forming a second-type InGaAsP layer on the second-type InP layer; forming an SiOpatterned layer having SiOregions and at least one channel facing toward a desired direction and formed between the SiOregions on the second-type InGaAsP layer; and performing a rapid thermal annealing treatment on the layered structure formed with the SiOpatterned layer. The rapid thermal annealing treatment has a treating temperature between 720° C. and 760° C. and a treating time between 60 and 240 seconds.