The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Jun. 17, 2014
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventor:

Enrico Magni, Pleasanton, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); G01K 11/18 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G01K 11/18 (2013.01); H01J 37/32935 (2013.01); H01L 21/31116 (2013.01); H01L 21/67248 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/3174 (2013.01); H01J 2237/31732 (2013.01);
Abstract

A method for estimating a temperature of a substrate includes generating plasma in a plasma processing system. The substrate is arranged on a substrate support structure in the plasma processing system. The plasma generates electromagnetic radiation that is incident upon a first surface of the substrate. The method further includes arranging a detector adjacent to a second surface of the substrate and in-situ the plasma processing system and measuring a signal intensity of electromagnetic radiation passing through the second surface of the substrate at N frequencies. The method includes selecting each of the N frequencies at which the signal intensity is measured by the detector to correspond to a phonon-generating frequency of a material in the substrate. The method includes converting the signal intensity at the N frequencies to N absorbance values and estimating a temperature of the substrate based on the N absorbance values.


Find Patent Forward Citations

Loading…