The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Aug. 10, 2012
Applicants:

Zhengguo Zhu, Chelmsford, MA (US);

Jonathan S. Steckel, Carlisle, MA (US);

Craig Breen, Somerville, MA (US);

Justin W. Kamplain, Bartlesville, OK (US);

Inia Song, Watertown, MA (US);

Chunming Wang, Acton, MA (US);

Inventors:

Zhengguo Zhu, Chelmsford, MA (US);

Jonathan S. Steckel, Carlisle, MA (US);

Craig Breen, Somerville, MA (US);

Justin W. Kamplain, Bartlesville, OK (US);

Inia Song, Watertown, MA (US);

Chunming Wang, Acton, MA (US);

Assignee:

SAMSUNG RESEARCH AMERICA, INC., Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B82Y 40/00 (2011.01); B82Y 30/00 (2011.01); H01B 1/12 (2006.01); C30B 29/40 (2006.01); C30B 28/04 (2006.01); B01J 13/02 (2006.01); C30B 7/14 (2006.01); C30B 29/48 (2006.01); C30B 29/60 (2006.01); H01L 21/02 (2006.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
C30B 29/40 (2013.01); B01J 13/02 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C30B 7/14 (2013.01); C30B 28/04 (2013.01); C30B 29/48 (2013.01); C30B 29/60 (2013.01); C01P 2004/64 (2013.01); H01L 21/02601 (2013.01); H01L 33/30 (2013.01); H01L 33/305 (2013.01);
Abstract

A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.


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