The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Nov. 19, 2014
Applicant:
Simpore, Inc., West Henrietta, NY (US);
Inventors:
Jon-Paul DesOrmeaux, Rochester, NY (US);
Christopher C. Striemer, Rochester, NY (US);
Assignee:
SiMPore Inc., West Henrietta, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); G02B 21/34 (2006.01); G01N 21/03 (2006.01); H01J 37/20 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); C23C 16/01 (2006.01);
U.S. Cl.
CPC ...
C23C 16/402 (2013.01); C23C 16/01 (2013.01); C23C 16/401 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); G01N 21/03 (2013.01); G02B 21/34 (2013.01); H01J 37/20 (2013.01);
Abstract
Provided is a free-standing silicon oxide film that is under tensile stress. Also, provided are methods of making a free-standing silicon oxide film that is under tensile stress. The methods use low-power PECVD deposition of silicon oxide. Methods of imaging one or more objects (e.g., cells) using a free-standing silicon oxide film that is under tensile stress is also provided.