The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 19, 2014
Applicant:
Zeon Corporation, Tokyo, JP;
Inventor:
Tatsuya Sugimoto, Tokyo, JP;
Assignee:
ZEON CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); C09K 13/00 (2006.01); H01L 21/02 (2006.01); C23F 1/12 (2006.01); C07C 17/23 (2006.01); C07C 17/383 (2006.01); C07C 23/08 (2006.01); H01L 21/3065 (2006.01); B65D 25/38 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); B65D 25/38 (2013.01); C07C 17/23 (2013.01); C07C 17/383 (2013.01); C07C 23/08 (2013.01); C23F 1/00 (2013.01); C23F 1/12 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); C07C 2601/10 (2017.05); H01L 21/0262 (2013.01); H01L 21/02263 (2013.01);
Abstract
The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.