The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Oct. 22, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Myounghoon Jung, Bucheon-si, KR;
Jungwoo Kim, Hwaseong-si, KR;
Youngjun Yun, Yongin-si, KR;
Seungeon Ahn, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/3745 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H04N 5/378 (2013.01);
Abstract
Provided are an image sensor compensating for property degradation of a metal-oxide-semiconductor (MOS) resulting from a threshold voltage shift that may occur when photodiodes and a MOS circuit of configuring an amplifier are integrated on the same substrate, and a method for driving the image sensor.