The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jan. 16, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Shu-Hsien Liao, San Jose, CA (US);
Feipeng Wang, San Jose, CA (US);
Cheng-Han Wang, San Jose, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/02 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H03F 1/22 (2006.01); H03F 1/32 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 1/0266 (2013.01); H03F 1/223 (2013.01); H03F 1/3205 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H03F 3/245 (2013.01); H03F 2200/18 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03F 2200/555 (2013.01); H03F 2201/3209 (2013.01);
Abstract
A power amplifier bias circuit having high dynamic range and low memory is disclosed. In an exemplary embodiment, an apparatus includes an output stage configured to generate a biased RF signal based on a first DC signal and a filtered signal. The apparatus also includes a low pass filter configured to filter the biased RF signal to generate the filtered signal.