The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2018

Filed:

Jun. 29, 2015
Applicant:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, Ibaraki, JP;

Inventors:

Shinichirou Hida, Hitachinaka, JP;

Hideyuki Sakamoto, Hitachinaka, JP;

Satoru Shigeta, Hitachinaka, JP;

Assignee:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/537 (2006.01); H02M 1/08 (2006.01); H02M 1/32 (2007.01); H02P 29/024 (2016.01); H02M 1/00 (2006.01); H02P 27/08 (2006.01);
U.S. Cl.
CPC ...
H02M 7/537 (2013.01); H02M 1/08 (2013.01); H02M 1/32 (2013.01); H02P 29/027 (2013.01); H02M 2001/0009 (2013.01); H02P 27/08 (2013.01);
Abstract

An object of the invention is to diagnose whether an overcurrent detecting function with respect to a power semiconductor element of a power conversion apparatus is normal. The power conversion apparatus of the invention is provided with IGBTs as the power semiconductor element which performs a switching operation to convert DC power supplied from a DC power source into AC power, an overcurrent detecting circuit, and an overcurrent simulating circuit. The IGBTs include an emitter sensing terminal which outputs a sense current according to a current flowing to an emitter electrode. The overcurrent detecting circuit detects the overcurrent flowing to the IGBTs on the basis of the sense current output from the emitter sensing terminal. The overcurrent simulating circuit outputs a simulation signal which simulates the overcurrent flowing to the IGBTs and toward the overcurrent detecting circuit.


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