The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
May. 31, 2017
Applicant:
Ngk Insulators, Ltd., Nagoya, Aichi-prefecture, JP;
Inventors:
Makoto Iwai, Kasugai, JP;
Takashi Yoshino, Ama, JP;
Assignee:
NGK INSULATORS, LTD., Aichi-prefecture, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); C30B 19/02 (2006.01); C30B 25/20 (2006.01); C30B 29/38 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 33/02 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01S 5/02 (2006.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); C30B 19/02 (2013.01); C30B 25/18 (2013.01); C30B 25/20 (2013.01); C30B 29/38 (2013.01); C30B 29/406 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01S 5/0206 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01S 5/32341 (2013.01); H01S 5/34333 (2013.01);
Abstract
A crystal substrate is composed of a crystal of a nitride of a group 13 element and has a first main face and a second main face. The crystal substrate includes a low carrier concentration region and a high carrier concentration region both extending between the first main face and second main face. The low carrier concentration region has a carrier concentration of 10/cmor lower and a defect density of 10/cmor lower. The high carrier concentration region has a carrier concentration of 10/cmor higher and a defect density of 10/cmor higher.