The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Dec. 08, 2016
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Kohei Miura, Yokohama, JP;
Yasuhiro Iguchi, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/10 (2006.01); H01L 31/0352 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/0304 (2013.01); H01L 31/03042 (2013.01); H01L 31/105 (2013.01); H01L 31/109 (2013.01); Y02E 10/544 (2013.01);
Abstract
A photodiode includes a light absorbing layer including a first superlattice structure that includes first semiconductor layers and second semiconductor layers, the first superlattice structure having a band structure sensitive to infrared light; a p-type semiconductor region; and an intermediate layer disposed between the p-type semiconductor region and the light absorbing layer, the intermediate layer having a conduction band having a bottom energy level lower than that of the p-type semiconductor region.