The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Nov. 02, 2016
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/87 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 23/66 (2006.01); H01L 51/05 (2006.01); H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/30612 (2013.01); H01L 23/66 (2013.01); H01L 29/205 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 51/0579 (2013.01); H01L 2223/6677 (2013.01);
Abstract
Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.