The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Dec. 08, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Takaharu Konomi, Kumamoto, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); G02F 1/1368 (2013.01); G02F 1/136227 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G02F 2201/123 (2013.01);
Abstract
A thin film transistor substrate includes a semiconductor channel layer made of an oxide semiconductor, protective insulating layers that cover the semiconductor channel layer, a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode. The second source electrode is located on the first source electrode and connected with the semiconductor channel layer through a first contact hole. The second drain electrode is located on the first drain electrode and connected with the semiconductor channel layer through a second contact hole.