The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Apr. 24, 2017
Applicant:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Inventors:
Eric S. Shapiro, San Diego, CA (US);
Matt Allison, Oceanside, CA (US);
Assignee:
pSemi Corporation, San Diego, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H03K 17/0412 (2006.01); H01L 27/12 (2006.01); H01L 27/06 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/027 (2013.01); H01L 29/78 (2013.01); H01L 27/0629 (2013.01); H01L 27/1203 (2013.01); H03K 17/04123 (2013.01); H03K 17/163 (2013.01);
Abstract
Embodiments of systems, methods, and apparatus for improving ESD performance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on Semiconductor-On-Insulator ('SOI') and Silicon-On-Sapphire ('SOS') substrates.