The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jan. 04, 2016
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing a thin film transistor substrate includes forming a semiconductor pattern on a substrate, wherein the semiconductor pattern includes a first area, a second area, and a third area, wherein the second area and the third area are located on each side of the first area; forming an insulating layer on the substrate to cover the semiconductor pattern; forming a metal pattern layer on the insulating layer using a first photosensitive pattern; doping the semiconductor pattern with first impurities using the first photosensitive pattern; forming a gate electrode by patterning the metal pattern layer using a second photosensitive pattern; and doping the semiconductor pattern with second impurities having a lower concentration than the first impurities.