The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Oct. 05, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Jun Koyama, Sagamihara, JP;
Junichiro Sakata, Atsugi, JP;
Tetsunori Maruyama, Atsugi, JP;
Yuki Imoto, Atsugi, JP;
Yuji Asano, Atsugi, JP;
Junichi Koezuka, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
The silicon nitride layerformed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH) and ammonia (NH) is provided on and in direct contact with the oxide semiconductor layerused for the resistor, and the silicon nitride layeris provided over the oxide semiconductor layerused for the thin film transistorwith the silicon oxide layerserving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layerthan into the oxide semiconductor layer. As a result, the resistance of the oxide semiconductor layerused for the resistoris made lower than that of the oxide semiconductor layerused for the thin film transistor