The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2018

Filed:

Jul. 02, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Hae-Suk Lee, Seongnam-si, KR;

Kyo-Min Sohn, Yongin-si, KR;

Ho-Young Song, Hwaseong-si, KR;

Sang-Hoon Shin, Suwon-si, KR;

Han-Vit Jung, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4093 (2006.01); H01L 25/065 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); G11C 7/1066 (2013.01); G11C 7/1069 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A memory device including a stack semiconductor device including; an upper substrate vertically stacked on a lower substrate, the upper substrate including N upper through-silicon vias (UTSV) and upper driving circuits, and the lower substrate including N lower through-silicon vias (LTSV) and lower driving circuits, wherein each one of the upper driving circuits is stagger-connected between a Kth UTSV and a (K+1)th LTSV, where 'N' is a natural number greater than 1, and 'K' is a natural number ranging from 1 to (N−1).


Find Patent Forward Citations

Loading…