The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jul. 02, 2015
Ipg Photonics Corporation, Oxford, MA (US);
Alexey Avdokhin, Southborough, MA (US);
Yuri Erokhin, Charlton, MA (US);
Manuel Leonardo, Mountain View, CA (US);
Alexander Limanov, Oxford, MA (US);
Igor Samartsev, Westborough, MA (US);
Michael von Dadelszen, Manchester, NH (US);
IPG PHOTONICS CORPORATION, Oxford, MA (US);
Abstract
The inventive system for crystallizing an amorphous silicon (a-Si) film is configured with a quasi-continuous wave fiber laser source operative to emit a film irradiating pulsed beam. The fiber laser source is operative to emit a plurality of non-repetitive pulses incident on the a-Si. In particular, the fiber laser is operative to emit multiple discrete packets of film irradiating light at a burst repetition rate (BRR), and a plurality of pulses within each packet emitted at a pulse repetition rate (PRR) which is higher than the BRR. The pulse energy, pulse duration of each pulse and the PRR are controlled so that each packet has a desired packet temporal power profile (W/cm) and packet energy sufficient to provide transformation of a-Si to polysilicon (p-Si) at each location of the film which is exposed to at least one packets.