The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2018

Filed:

Nov. 28, 2012
Applicant:

Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;

Inventors:

Atsushi Ogasawara, Saitama, JP;

Koji Ito, Hanno, JP;

Kazuhiko Ito, Hanno, JP;

Koya Muyari, Hanno, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C03C 3/066 (2006.01); C03C 3/093 (2006.01); C03C 8/04 (2006.01); C03C 8/24 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); C03C 3/066 (2013.01); C03C 3/093 (2013.01); C03C 8/04 (2013.01); C03C 8/24 (2013.01); H01L 21/02123 (2013.01); H01L 21/02172 (2013.01); H01L 21/02318 (2013.01); H01L 21/76232 (2013.01); H01L 23/291 (2013.01); H01L 23/3178 (2013.01); H01L 23/564 (2013.01); H01L 29/0661 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a method of manufacturing a semiconductor device which includes, in the following order: a first step of preparing a semiconductor element which includes a pn junction exposure portion; a second step of forming an insulation layer such that the insulation layer covers the pn junction exposure portion; and a third step of forming a glass layer on the insulation layer where a layer made of glass composition for protecting a semiconductor junction is formed on the insulation layer and, thereafter, the layer made of glass composition for protecting a semiconductor junction is baked.


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