The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Oct. 23, 2013
Applicant:
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/02 (2006.01); B28D 1/22 (2006.01); G01N 27/04 (2006.01); B28D 5/00 (2006.01); C30B 29/06 (2006.01); F27D 19/00 (2006.01); F27D 21/00 (2006.01);
U.S. Cl.
CPC ...
C30B 33/02 (2013.01); B28D 1/22 (2013.01); B28D 5/0011 (2013.01); C30B 29/06 (2013.01); F27D 19/00 (2013.01); F27D 21/00 (2013.01); G01N 27/041 (2013.01);
Abstract
A method for forming a silicon ingot includes the following steps: providing a silicon ingot of variable electrical resistivity and containing interstitial oxygen, determining the interstitial oxygen concentration in different areas of the silicon ingot, calculating the concentration of thermal donors to be created in the different areas to reach a target value of the electrical resistivity, and subjecting the different areas of the silicon ingot to annealing so as to form the thermal donors. The annealing temperature in each area is determined from the thermal donor and interstitial oxygen concentrations of the area and from a predefined annealing time.