The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2018

Filed:

Sep. 20, 2016
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Digamber Gurudas Porob, Karnataka, IN;

James Edward Murphy, Niskayuna, NY (US);

Florencio Garcia, Schenectady, NY (US);

Srinivas Prasad Sista, Altamont, NY (US);

Anant Achyut Setlur, Niskayuna, NY (US);

William Winder Beers, Chesterland, OH (US);

Fangming Du, Hudson, OH (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/61 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/56 (2010.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
C09K 11/617 (2013.01); H01L 25/0753 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01);
Abstract

Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including InGaAlN, wherein 0≤i; 0≤j; 0≤k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C-Calcohol, a C-Cketone, a C-Cacetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.


Find Patent Forward Citations

Loading…