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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9935625 B1

PDFFull Text
Date of Patent:
Apr. 03, 2018

Filed:

Aug. 10, 2016

Gate drive circuit and power supply capable of reducing surge voltage

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Atsushi Yamaguchi, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Kenneth B Wells

Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/0812 (2006.01); H03K 17/16 (2006.01); H01L 29/739 (2006.01); H01L 29/866 (2006.01); H02M 1/088 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01); H01L 27/02 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H02M 1/42 (2007.01); H02M 3/158 (2006.01); H02M 7/5387 (2007.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08122 (2013.01); H01L 29/7391 (2013.01); H01L 29/866 (2013.01); H02M 1/08 (2013.01); H02M 1/088 (2013.01); H03K 17/162 (2013.01); H01L 27/0248 (2013.01); H01L 29/0623 (2013.01); H01L 29/1066 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/7786 (2013.01); H02M 1/4208 (2013.01); H02M 1/4225 (2013.01); H02M 3/158 (2013.01); H02M 7/5387 (2013.01); H02M 2001/0054 (2013.01); Y02B 70/126 (2013.01); Y02B 70/1491 (2013.01);
Abstract

The gate drive circuit includes: a gate resistance Rconnected to a gate Gof a switching device Q; and a gated diode Dconnected in parallel to the gate resistance R, wherein a relationship of V(Di)<V(Tr) is satisfied, where V(Di) is a forward threshold voltage of the gated diode D, and V(Tr) is a threshold voltage of the switching device Q. There is provided: a gate drive circuit having high speed switching performance in which a misoperation is suppressed and surge voltage is reduced; and a power supply mounted with such a gate drive circuit.

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Quick Actions:

Yamaguchi, Atsushi. (2018). Gate drive circuit and power supply capable of reducing surge voltage (U.S. Patent No. 9935625). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9935625

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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