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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9935577 B1

PDFFull Text
Date of Patent:
Apr. 03, 2018

Filed:

Apr. 13, 2016

Semiconductor device and fault detecting method

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Katsutoshi Bito, Tokyo, JP;

Daisuke Iijima, Tokyo, JP;

Yuji Takehara, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McGinn IP Law Group, PLLC.

Primary Examiner:

Melissa Koval

Assistant Examiner:

Nasima Monsur

Int. Cl.
CPC ...
H02P 29/024 (2016.01); H01L 29/739 (2006.01); H01L 29/866 (2006.01); H01L 27/06 (2006.01); H01L 27/02 (2006.01); H02P 27/08 (2006.01); H02M 7/537 (2006.01); H03K 19/0185 (2006.01); H01L 23/36 (2006.01); G01R 31/30 (2006.01); H01L 23/373 (2006.01); H02M 7/5387 (2007.01); H02M 1/32 (2007.01);
U.S. Cl.
CPC ...
H02P 29/024 (2013.01); H01L 23/36 (2013.01); H01L 27/0255 (2013.01); H01L 27/0664 (2013.01); H01L 29/7395 (2013.01); H01L 29/866 (2013.01); H02M 7/537 (2013.01); H02P 27/08 (2013.01); H02P 29/0241 (2016.02); H03K 19/018507 (2013.01); G01R 31/30 (2013.01); H01L 23/3735 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/19107 (2013.01); H02M 7/53871 (2013.01); H02M 2001/327 (2013.01);
Abstract

A method of detecting a fault of a semiconductor device including a power device mounted on a metal base and a drive circuit for driving the power device, the method detecting a fault of the semiconductor device beforehand based on an increase in thermal resistance between the metal base and the power device. A state of the power device is measured immediately before and after the power device is driven by the drive circuit. A temperature difference of the power device before and after driving is calculated according to the result of measurement. An increase in thermal resistance between the metal base and the power device is detected based on the temperature difference and an amount of electricity inputted to the power device in the driving period, and a fault of the semiconductor device is detected beforehand according to the increase.

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