The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Mar. 08, 2017
Applicant:
Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;
Inventors:
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/12 (2006.01); H01L 33/00 (2010.01); H01S 5/343 (2006.01); H01S 5/187 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18327 (2013.01); H01L 33/0075 (2013.01); H01S 5/1231 (2013.01); H01S 5/183 (2013.01); H01S 5/187 (2013.01); H01S 5/18319 (2013.01); H01S 5/34333 (2013.01); H01L 2933/0058 (2013.01);
Abstract
A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.