The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Apr. 17, 2017
Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventors:

Komei Tazawa, Kawasaki, JP;

Ji-Hao Liang, Tachikawa, JP;

Seiichiro Kobayashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01); H01S 5/187 (2006.01); H01S 5/323 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18308 (2013.01); H01S 5/0425 (2013.01); H01S 5/18341 (2013.01); H01S 5/18361 (2013.01); H01S 5/34333 (2013.01); H01S 5/187 (2013.01); H01S 5/18369 (2013.01); H01S 5/32341 (2013.01); H01S 5/423 (2013.01); H01S 2301/166 (2013.01);
Abstract

A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode. At least one of a portion of the transparent electrode corresponding to the opening and a portion of the second-conductivity-type semiconductor layer corresponding to the opening that are in contact with each other in the through opening includes a first resistive region disposed along an inner circumference of the through opening and a second resistive region disposed on a center region of the through opening.


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