The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Feb. 15, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Hwan Hee Jeong, Ulsan, KR;

Sang Youl Lee, Jeonju-si, KR;

June O Song, Yongin-si, KR;

Tchang Hun Oh, Seoul, KR;

Hee Seok Choi, Seoul, KR;

Kwang Ki Choi, Gwangsan-gu, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 33/22 (2010.01); H01L 33/38 (2010.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/0075 (2013.01); H01L 33/145 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 33/32 (2013.01);
Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.


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