The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Sep. 15, 2016
The Regents of the University of California, Oakland, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO seed layer forms an electrical contact to the diode; and depositing a ZnO layer on the ZnO seed layer, wherein the ZnO seed layer and the ZnO layer each have a thickness, a crystal quality, and a doping level such that (1) the diode comprising III-nitride material is turned on with a turn on voltage of 2.75 volts or less applied across the ZnO layers and the diode, and (2) a contact resistance, of a structure comprising the ZnO layers and the diode, is lower as compared to a contact resistance of a structure comprising the ZnO layer directly on the diode without the ZnO seed layer.