The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Sep. 15, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Yaojia Chen, Jersey City, NJ (US);
Ning Li, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Jinghui Yang, Los Angeles, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/60 (2010.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0062 (2013.01); H01L 33/30 (2013.01); H01L 33/60 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); H01L 2933/0058 (2013.01);
Abstract
A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.