The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Apr. 07, 2015
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Ki Young Song, Seoul, KR;

Hyun Chul Lim, Seoul, KR;

Myung Hoon Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/04 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 21/00 (2006.01); H01L 29/18 (2006.01); H01L 29/72 (2006.01); H01L 33/08 (2010.01); H01L 33/14 (2010.01); H01L 33/62 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 21/00 (2013.01); H01L 27/15 (2013.01); H01L 29/18 (2013.01); H01L 29/72 (2013.01); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/62 (2013.01); H01L 33/0079 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01);
Abstract

An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system. A light-emitting element according to the embodiment may comprise: a first conductive semiconductor layer (); a second conductive semiconductor layer () disposed below the first conductive semiconductor layer (); an active layer () disposed between the first conductive semiconductor layer () and the second conductive semiconductor layer (); a plurality of holes (H) exposing parts of the first conductive semiconductor layer () to the bottom surface of the second conductive semiconductor layer () by penetrating the second conductive semiconductor layer () and the active layer (); first contact electrodes () electrically connected to the first conductive semiconductor layer () from the bottom surface of the second conductive semiconductor layer () through the plurality of holes (H); an insulation layer () disposed between the first contact electrode () and the plurality of holes (H); a bonding layer () electrically connected to the first contact electrodes (); a support member () disposed below the bonding layer (); a second contact electrode () electrically connected to the second conductive semiconductor layer (); and a first current-spreading semiconductor layer () inside the first conductive semiconductor layer () above the first contact electrode ().


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