The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Mar. 03, 2016
Applicant:
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Inventors:
Timothy P. Holme, Mountain View, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
Andrei T. Iancu, Menlo Park, CA (US);
Assignee:
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/92 (2006.01); H01L 33/00 (2010.01); H01G 7/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/92 (2013.01); H01G 7/06 (2013.01); H01L 33/0008 (2013.01); Y02T 10/7022 (2013.01);
Abstract
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.