The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Jun. 17, 2016
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Inventor:
Wen Shi, Shenzhen, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 21/441 (2006.01); H01L 21/027 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/027 (2013.01); H01L 21/441 (2013.01); H01L 29/7869 (2013.01);
Abstract
A method of fabricating a thin film transistor structure is described. An oxide semiconductor layer is fabricated by a self-aligned method and a lift-off process, and a source electrode and a drain electrode are fabricated by another lift-off process, so as to solve a problem in the conventional technology, wherein a semiconductor channel is damaged when an etching is performed, and a problem of raising a process cost due to the increasing complexity of the process.