The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Feb. 24, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Mitsuyoshi Mori, Kyoto, JP;

Ryohei Miyagawa, Kyoto, JP;

Yoshiyuki Ohmori, Osaka, JP;

Yoshihiro Sato, Osaka, JP;

Yutaka Hirose, Kyoto, JP;

Yusuke Sakata, Osaka, JP;

Toru Okino, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/30 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/307 (2013.01);
Abstract

A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.


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