The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Oct. 07, 2016
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Masatoshi Kimura, Ibaraki, JP;

Assignee:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01); H01L 31/062 (2012.01); H04N 5/335 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/1464 (2013.01); H01L 27/14616 (2013.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H04N 5/335 (2013.01);
Abstract

In a semiconductor device in which a plurality of light receiving elements are provided in each of a plurality of pixels that form a solid-state image sensor, a decrease in the performance of the semiconductor device is prevented, the decrease occurring due to an increase in the number of wires. In the pixel having a first photodiode and a second photodiode, a first transfer transistor coupled to the first photodiode and a second transfer transistor coupled to the second photodiode are respectively controlled by the same gate electrode, thereby allowing the number of wires for controlling the first and the second transfer transistors is reduced.


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