The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Jan. 05, 2017
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Toshiyuki Kasai, Okaya, JP;

Takeshi Nomura, Shiojiri, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 27/12 (2006.01); G09G 3/3233 (2016.01); G09G 3/3266 (2016.01); G09G 3/3283 (2016.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 3/3283 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 27/3258 (2013.01); G02F 1/136213 (2013.01); G09G 2300/0809 (2013.01); G09G 2300/0819 (2013.01); G09G 2310/0202 (2013.01); G09G 2320/0233 (2013.01); H01L 27/3262 (2013.01); H01L 27/3265 (2013.01); H01L 27/3276 (2013.01); H01L 29/78618 (2013.01);
Abstract

An electro-optical device formed on a semiconductor substrate, includes: a first transistor controlling a current level according to a voltage between a gate and a source; a second transistor electrically connected between a data line and the gate of the first transistor; a third transistor electrically connected between the gate and a drain of the first transistor; and a light-emitting element emitting light at a luminance according to the current level, in which one of a source and a drain of the second transistor and one of a source and a drain of the third transistor are formed by a common diffusion layer.


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