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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9934966 B1

PDFFull Text
Date of Patent:
Apr. 03, 2018

Filed:

Jun. 22, 2016

Method for processing a carrier and an electronic component

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Guenther Ruhl, Regensburg, DE;

Klemens Pruegl, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Viering, Jentschura & Partner mbB

Primary Examiner:

Marc Armand

Assistant Examiner:

Quinton Brasfield

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 21/225 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02524 (2013.01); H01L 21/0243 (2013.01); H01L 21/02422 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02527 (2013.01); H01L 21/02532 (2013.01); H01L 21/02587 (2013.01); H01L 21/0405 (2013.01); H01L 21/2254 (2013.01); H01L 21/7685 (2013.01); H01L 29/04 (2013.01); H01L 29/0669 (2013.01); H01L 29/1075 (2013.01); H01L 29/16 (2013.01); H01L 29/1606 (2013.01); H01L 29/167 (2013.01); H01L 29/66037 (2013.01); H01L 29/778 (2013.01); H01L 29/1608 (2013.01);
Abstract

In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

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