The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Aug. 20, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Min Kook Kim, Goyang-si, KR;

Woo Seok Ko, Seoul, KR;

Yu Sin Yang, Seoul, KR;

Sang Kil Lee, Yongin-si, KR;

Chung Sam Jun, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); H01J 37/22 (2006.01); G01N 23/22 (2018.01); G03F 7/20 (2006.01); G01N 23/203 (2006.01); G01N 23/225 (2018.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); G01N 23/22 (2013.01); G03F 7/70633 (2013.01); H01J 37/222 (2013.01); G01N 23/203 (2013.01); G01N 23/2206 (2013.01); G01N 23/2251 (2013.01); H01J 2237/063 (2013.01); H01J 2237/2448 (2013.01); H01J 2237/24475 (2013.01); H01J 2237/2806 (2013.01); H01J 2237/2814 (2013.01);
Abstract

A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.


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